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Abstract <p>The problem of electrical conductivity of a conducting channel at the boundary of a heterojunction or in an MIS transistor is solved taking into account the quantum theory of transfer processes. The layer thickness can be comparable to or less than the de Broglie wavelength of charge carriers. The behavior of charge carriers is described by the quantum Liouville equation. The influence of surface scattering of charge carriers is taken into account through the Soffer boundary conditions. An expression for electrical conductivity is obtained and its dependence on the transverse electric field strength and the roughness parameter of the boundary of the conducting channel with another semiconductor is analyzed. A comparative analysis of theoretical calculations with the experimental data is carried out.</p>

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Quantum Transport of Charge Carriers in a Triangular Well Taking Surface Scattering into Account

  • 期刊论文

  • 发表日期：

    2025年2月1日

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  • I. A. Kuznetsova,
  • D. N. Romanov

摘要

Abstract

The problem of electrical conductivity of a conducting channel at the boundary of a heterojunction or in an MIS transistor is solved taking into account the quantum theory of transfer processes. The layer thickness can be comparable to or less than the de Broglie wavelength of charge carriers. The behavior of charge carriers is described by the quantum Liouville equation. The influence of surface scattering of charge carriers is taken into account through the Soffer boundary conditions. An expression for electrical conductivity is obtained and its dependence on the transverse electric field strength and the roughness parameter of the boundary of the conducting channel with another semiconductor is analyzed. A comparative analysis of theoretical calculations with the experimental data is carried out.