Abstract <p>The changes that occur on the surface of tantalum oxide bombarded by helium ions were analyzed by a method of calculating the component composition and thickness of the layer formed as a result of light-ion sputtering of two-component targets. Based on the data obtained, the thickness of the changed layer and its composition were determined. The results showed that the surface layers contain less oxygen than the original material, which agrees with experimental observations.</p>

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Stoichiometric Sputtering of Tantalum Pentoxide by Helium Ions

  • V. V. Manukhin

摘要

Abstract

The changes that occur on the surface of tantalum oxide bombarded by helium ions were analyzed by a method of calculating the component composition and thickness of the layer formed as a result of light-ion sputtering of two-component targets. Based on the data obtained, the thickness of the changed layer and its composition were determined. The results showed that the surface layers contain less oxygen than the original material, which agrees with experimental observations.