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Abstract <p>Raman scattering, photoluminescence, and electron paramagnetic resonance were studied at room and cryogenic temperatures in (Ga,Mn)As nanowires with a high concentration of Mn atoms grown by low-temperature molecular beam epitaxy on GaAs substrates with crystallographic orientation (111). Optical methods confirmed the possibility to grow nanowires of high crystalline quality based on magnetic semiconductor materials of the (Ga,Mn)As type.</p>

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Optical Properties of Magnetic Nanowires (Ga,Mn)As on GaAs(111) Substrates

  • 期刊论文

  • 发表日期：

    2026年2月1日

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  • S. V. Zaitsev,
  • A. I. Dmitriev

摘要

Abstract

Raman scattering, photoluminescence, and electron paramagnetic resonance were studied at room and cryogenic temperatures in (Ga,Mn)As nanowires with a high concentration of Mn atoms grown by low-temperature molecular beam epitaxy on GaAs substrates with crystallographic orientation (111). Optical methods confirmed the possibility to grow nanowires of high crystalline quality based on magnetic semiconductor materials of the (Ga,Mn)As type.