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Abstract <p>A theoretical model of a spin-tunnel element containing a synthetic antiferromagnet is developed, based on the concept of the coherent rotation of magnetization vectors of ferromagnetic nanolayers under the influence of an external magnetic field. The obtained field dependences <InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11954_2025_5716_Article_IEq1.gif" Format="GIF" Height="19" Rendition="HTML" Resolution="72" Type="Linedraw" Width="71" /> </InlineMediaObject> <EquationSource Format="TEX">\(\cos ({{\theta }_{r}}(h))\)</EquationSource> <!--BullPhys2571250Vasilyev-m1--> </InlineEquation> for nearly compensated and non-compensated synthetic antiferromagnets show that a 30% non-compensated synthetic antiferromagnet switches magnetization at lower fields.</p>

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Features of Magnetization Reversal in Magnetic Layers of a Synthetic Antiferromagnet in a Spin-Tunnel Element

  • 期刊论文

  • 发表日期：

    2025年9月1日

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  • D. V. Vasilyev,
  • P. A. Polyakov,
  • V. V. Amelichev,
  • D. V. Kostyuk,
  • O. P. Polyakov,
  • S. I. Kasatkin

摘要

Abstract

A theoretical model of a spin-tunnel element containing a synthetic antiferromagnet is developed, based on the concept of the coherent rotation of magnetization vectors of ferromagnetic nanolayers under the influence of an external magnetic field. The obtained field dependences \(\cos ({{\theta }_{r}}(h))\) for nearly compensated and non-compensated synthetic antiferromagnets show that a 30% non-compensated synthetic antiferromagnet switches magnetization at lower fields.