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Abstract <p>The authors consider the properties of periodic dielectric structures made of gallium phosphide (GaP) coated with layers of silver. Such structures allow signals of surface-enhanced inelastic light scattering (SERS) to be amplified. Period dependences are obtained for the intensities of signal scattering at different heights of the structure. Intensities of signal scattering are compared for SERS structures on SiO<sub>2</sub> and GaP substrates at laser excitation wavelengths of 532, 785, and 1064 nm. GaP-based structures with thin metal layers are found to enhance signals by more than seven orders of magnitude in the infrared range. The dependence of the Raman gain on the thickness of deposited layers is studied.</p>

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Using Island SERS Structures on GaP Substrates for Surface-Enhanced Inelastic Light Scattering in the Infrared Range

  • 期刊论文

  • 发表日期：

    2025年2月1日

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  • S. M. Makarovskaya,
  • V. V. Solovyev,
  • T. D. Rudakov,
  • I. V. Kukushkin

摘要

Abstract

The authors consider the properties of periodic dielectric structures made of gallium phosphide (GaP) coated with layers of silver. Such structures allow signals of surface-enhanced inelastic light scattering (SERS) to be amplified. Period dependences are obtained for the intensities of signal scattering at different heights of the structure. Intensities of signal scattering are compared for SERS structures on SiO2 and GaP substrates at laser excitation wavelengths of 532, 785, and 1064 nm. GaP-based structures with thin metal layers are found to enhance signals by more than seven orders of magnitude in the infrared range. The dependence of the Raman gain on the thickness of deposited layers is studied.