Abstract <p>The properties of a silicon-based plasmonic detector of electromagnetic radiation were examined in the low-frequency range (0.1–20 GHz). The sensitive element of the detector was embedded in a matched coplanar waveguide, through which electromagnetic radiation was conveyed. The dependence of the constant voltage arising at the detector output on the frequency of the incident radiation was measured. The power characteristics of the detector were measured, and the threshold radiation power at which the detector transitions into a nonlinear regime was determined.</p>

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Low-Frequency Properties of a Silicon-Based Plasmonic Detector of Electromagnetic Radiation

  • A. V. Shchepetilnikov,
  • A. R. Khisameeva,
  • Ya. V. Fedotova,
  • A. A. Dremin,
  • I. V. Kukushkin

摘要

Abstract

The properties of a silicon-based plasmonic detector of electromagnetic radiation were examined in the low-frequency range (0.1–20 GHz). The sensitive element of the detector was embedded in a matched coplanar waveguide, through which electromagnetic radiation was conveyed. The dependence of the constant voltage arising at the detector output on the frequency of the incident radiation was measured. The power characteristics of the detector were measured, and the threshold radiation power at which the detector transitions into a nonlinear regime was determined.