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Abstract <p>The necessity of developing new methods for the nondestructive testing of the structure of silicon targets and the detection of internal defects in them is substantiated. It is established that a&#xa0;number of internal defects are not identified by the methods used for testing targets (these defects appear only during vidicon operation). For the targets, a study of the substrate structure and the formed topology, as well as the surface of the photosensitive elements, was carried out using X-ray diffractometry and a developed optical microscope with the formation of a diffraction image. A substrate strain was established that led to the formation of mechanical stresses with an increase in the concentration of charge carrier generation centers. A significant violation of the (111) orientation in the structure of the Si target substrate was detected. A new result was obtained that explains the formation of white illumination in the recorded images during vidicon testing, and two reasons for the formation of an internal defect in the target, which led to its appearance, were established. These are: uneven impact along the edges of the target when pressing it onto the indium ring and uneven application of layers during the manufacture of its structure. A new nondestructive method for testing silicon targets has been developed to detect this internal defect and others during their manufacture before installation in the vidicon. A number of measures have been proposed to eliminate these defects during the implementation of the technological process.</p>

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A New Method with Nondestructive Diagnostics for Determining Internal Defects in Silicon Vidicon Targets

  • 期刊论文

  • 发表日期：

    2026年1月1日

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  • V. V. Davydov,
  • A. A. Sokolova,
  • V. D. Andreeva,
  • S. A. Kotov,
  • S. V. Ganin,
  • A. E. Kim

摘要

Abstract

The necessity of developing new methods for the nondestructive testing of the structure of silicon targets and the detection of internal defects in them is substantiated. It is established that a number of internal defects are not identified by the methods used for testing targets (these defects appear only during vidicon operation). For the targets, a study of the substrate structure and the formed topology, as well as the surface of the photosensitive elements, was carried out using X-ray diffractometry and a developed optical microscope with the formation of a diffraction image. A substrate strain was established that led to the formation of mechanical stresses with an increase in the concentration of charge carrier generation centers. A significant violation of the (111) orientation in the structure of the Si target substrate was detected. A new result was obtained that explains the formation of white illumination in the recorded images during vidicon testing, and two reasons for the formation of an internal defect in the target, which led to its appearance, were established. These are: uneven impact along the edges of the target when pressing it onto the indium ring and uneven application of layers during the manufacture of its structure. A new nondestructive method for testing silicon targets has been developed to detect this internal defect and others during their manufacture before installation in the vidicon. A number of measures have been proposed to eliminate these defects during the implementation of the technological process.