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Abstract <p>The composition, structure, and properties of zinc-implanted silicon annealed in an inert atmosphere at elevated temperatures are analyzed. The samples were characterized by Rutherford backscattering spectrometry, transmission electron microscopy, and photoluminescence. The near-surface layer of silicon becomes amorphous after implantation, with the formation of particles of metallic zinc and its oxide with different orientations. Core–shell structures of the type Zn (core)/ZnO (shell) may also form. After annealing at 700°C, crystallites of the intermetallic compound ZnSi oriented with respect to the silicon crystal lattice are formed in the upper part of the near-surface layer, together with crystallites of metallic zinc and its oxide.</p>

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Visualization and Identification of the Composition and Structure of Zinc-Implanted Silicon Near-Surface Layer

  • 期刊论文

  • 发表日期：

    2025年12月1日

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  • V. V. Privezentsev,
  • A. A. Firsov,
  • V. S. Kulikauskas,
  • V. V. Zatekin,
  • M. V. Polyakov,
  • L. S. Volkova,
  • A. N. Tereshchenko

摘要

Abstract

The composition, structure, and properties of zinc-implanted silicon annealed in an inert atmosphere at elevated temperatures are analyzed. The samples were characterized by Rutherford backscattering spectrometry, transmission electron microscopy, and photoluminescence. The near-surface layer of silicon becomes amorphous after implantation, with the formation of particles of metallic zinc and its oxide with different orientations. Core–shell structures of the type Zn (core)/ZnO (shell) may also form. After annealing at 700°C, crystallites of the intermetallic compound ZnSi oriented with respect to the silicon crystal lattice are formed in the upper part of the near-surface layer, together with crystallites of metallic zinc and its oxide.