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Abstract <p>High-efficiency visible-range micro-LEDs are in strong demand for integrated photonics, flexible optoelectronics, and sensing. This work demonstrates the feasibility of fabricating nanoscale light-emitting devices based on core–shell <i>p</i>-GaP/GaPNAs/<i>n</i>-GaP heterostructured nanowires epitaxially grown on a silicon substrate. A post-growth fabrication process for nanostructured LEDs has been developed. A design is proposed for a top transparent electrode consisting of a bilayer with an indium–tin oxide top layer and a molybdenum oxide sublayer. Numerical modeling and electrical measurements show that introducing a molybdenum oxide sublayer with a high work function reduces the potential barrier at the semiconductor interface, thereby improving the efficiency of the light-emitting devices.</p>

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MicroLED Based on GaP(N, As) Nanowires with Molybdenum and Indium–Tin Oxides Optimized Electrodes with Low Optical and Electrical Losses

  • 期刊论文

  • 发表日期：

    2025年12月1日

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  • K. N. Novikova,
  • A. S. Goltaev,
  • A. A. Maksimova,
  • A. K. Kaveev,
  • V. V. Fedorov,
  • A. M. Mozharov

摘要

Abstract

High-efficiency visible-range micro-LEDs are in strong demand for integrated photonics, flexible optoelectronics, and sensing. This work demonstrates the feasibility of fabricating nanoscale light-emitting devices based on core–shell p-GaP/GaPNAs/n-GaP heterostructured nanowires epitaxially grown on a silicon substrate. A post-growth fabrication process for nanostructured LEDs has been developed. A design is proposed for a top transparent electrode consisting of a bilayer with an indium–tin oxide top layer and a molybdenum oxide sublayer. Numerical modeling and electrical measurements show that introducing a molybdenum oxide sublayer with a high work function reduces the potential barrier at the semiconductor interface, thereby improving the efficiency of the light-emitting devices.