Abstract <p>Thin MoS₂ films with a thickness of three to 30 monolayers of a large area on <i>c</i>-Al₂O₃ substrates were obtained by pulsed laser deposition. The MoS₂ films were synthesized using MoS₂ targets manufactured according to the developed technique at a substrate temperature of 700 and 770°C. The influence of laser synthesis conditions and substrate temperature on the deposition rate and optical and electrical characteristics of the MoS₂ films was studied. The film thickness was controlled by the number of laser pulses, which was confirmed by atomic force microscopy and Raman spectroscopy. A clear dependence of the characteristic phonon modes of Raman scattering on the number of monolayers was observed in the spectra of the MoS₂ films. With an increase in the number of monolayers in the film, the position of the photonic modes <InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(E_{{2g}}^{1}\)</EquationSource> <!--SurfInv2570169Parshina-m1--> </InlineEquation> and <i>A</i>_1<i>g</i> were found to shift to the red and blue regions of spectrum, respectively, and the distance between them changed from 25 to 26.9 cm^–1 for the number of pulses increasing from 24 to 720, respectively, at a growth temperature of 770°C.</p>