Abstract <p>This work aims to address the problem of improving the accuracy of thin-film resistors. The main cause of this issue is the uncontrolled change in resistor resistance over time and under the influence of temperature, which makes it difficult to achieve high resistance stability. To solve this problem, the use of compensation layers with temperature coefficients of resistance of opposite signs is proposed. A design and technological solution has been developed for ultra-precision multilayer and combined thin-film resistive structures with temperature self-compensation, made of metal–silicide alloys and nichrome-based alloys, as well as K-30S cermet and nickel, respectively. The combination of films made of Kh20N75Yu alloy and K-30S cermet was chosen based on the optimal ratio of layer thicknesses. The structure and topology of combined and multilayer thin-film resistors have been developed. A technological process for manufacturing thin-film chip resistors has been created; deposition modes and topology formation by photolithography followed by temperature stabilization have been refined. Functional tests of a pilot batch of samples have been carried out, for which additional technological equipment was developed. The developed technology makes it possible to achieve a temperature coefficient of resistance of ±5 × 10^–7 °C^–1 in the operating temperature range from ‒60 to +125°C. The scientific novelty of this work lies in the ability to combine thin films of Kh20N75Yu/K-30S for multilayer and K-30S/Ni for combined resistive structures in the proposed design to achieve temperature compensation and improve stability characteristics.</p>