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Abstract <p>In this work, single-phase monocrystalline and thin-film samples of lead selenide have been synthesized. Methods have been developed for the creation of surface oxidized lead selenide with a conductivity different from that of the base PbSe. Using oxidized lead selenide as an interface, Ag/Pb<sub>3</sub>OSeO<sub>3</sub>/PbSe heterostructures were made, demonstrating stable memristive characteristics. The obtained heterojunctions were investigated for the detection of resistive switching, and the volt -ampere characteristics and the temperature dependence of the resistance of the structures were measured. By changing the external parameters—frequency and magnitude of the electric field voltage applied to the heterocontact—different metastable states were realized. Dynamic effects were studied, and the transition times from one to another metastable state were determined. Single crystal-based memristors were more stable than film structures: reproducible characteristics in single crystal-based memristors were observed for several months.</p>

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Properties of Interface Structures Based on Oxidized Lead Selenide

  • 期刊论文

  • 发表日期：

    2025年6月1日

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  • N. A. Tulina,
  • A. N. Rossolenko,
  • I. M. Shmytko,
  • I. Y. Borisenko,
  • D. N. Borisenko,
  • N. N. Kolesnikov

摘要

Abstract

In this work, single-phase monocrystalline and thin-film samples of lead selenide have been synthesized. Methods have been developed for the creation of surface oxidized lead selenide with a conductivity different from that of the base PbSe. Using oxidized lead selenide as an interface, Ag/Pb3OSeO3/PbSe heterostructures were made, demonstrating stable memristive characteristics. The obtained heterojunctions were investigated for the detection of resistive switching, and the volt -ampere characteristics and the temperature dependence of the resistance of the structures were measured. By changing the external parameters—frequency and magnitude of the electric field voltage applied to the heterocontact—different metastable states were realized. Dynamic effects were studied, and the transition times from one to another metastable state were determined. Single crystal-based memristors were more stable than film structures: reproducible characteristics in single crystal-based memristors were observed for several months.