Scholarlink

Abstract <p>The results of studying silicon oxide films obtained by plasma enhanced chemical vapor deposition on Si substrates are presented. They were implanted with <sup>64</sup>Zn<sup>+</sup> ions with an energy of 50 keV (dose 7 × 10<sup>16</sup> cm<sup>–2</sup>) and then annealed in oxygen atmosphere at elevated temperatures. It has been found that after implantation zinc is distributed in the SiO<sub>2</sub> film according to the normal law with a maximum of about 40 nm. After implantation, zinc is in the silicon oxide film both in the metallic phase (closer to the film surface) and in the oxidized state (in the film depth). After annealing up to 800°C, the zinc profile shifts into the film depth; in this case, the zinc is in the film only in the oxidized state. At high temperatures (over 800°C), the zinc profile shifts toward the film surface.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Study of SiO2 Films Obtained by PECVD and Doped with Zn Ions

  • 期刊论文

  • 发表日期：

    2025年4月1日

查看全文
  • V. V. Privezentsev,
  • A. A. Firsov,
  • V. S. Kulikauskas,
  • V. V. Zatekin,
  • E. P. Kirilenko,
  • A. V. Goryachev

摘要

Abstract

The results of studying silicon oxide films obtained by plasma enhanced chemical vapor deposition on Si substrates are presented. They were implanted with 64Zn+ ions with an energy of 50 keV (dose 7 × 1016 cm–2) and then annealed in oxygen atmosphere at elevated temperatures. It has been found that after implantation zinc is distributed in the SiO2 film according to the normal law with a maximum of about 40 nm. After implantation, zinc is in the silicon oxide film both in the metallic phase (closer to the film surface) and in the oxidized state (in the film depth). After annealing up to 800°C, the zinc profile shifts into the film depth; in this case, the zinc is in the film only in the oxidized state. At high temperatures (over 800°C), the zinc profile shifts toward the film surface.