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Abstract <p>The report presents the results of studying the process of periodic relief nucleation on the silicon surface irradiated with a 30 keV focused beam of gallium ions at ion beam incidence angles θ = 30°, 40°, and 50°. It is shown that the following factors initiate the origin of periodic relief: gallium precipitates in the near-surface silicon layer (θ = 30°), topographic inhomogeneity in the form of a hole at the boundary of the bottom, and the frontal wall of the sputtering crater (θ = 40° and 50°).</p>

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Initiation of Periodic Relief Development on the Silicon Surface under Ion Irradiation

  • 期刊论文

  • 发表日期：

    2025年4月1日

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  • M. A. Smirnova,
  • V. I. Bachurin,
  • L. A. Mazaletsky,
  • D. E. Pukhov,
  • A. B. Churilov

摘要

Abstract

The report presents the results of studying the process of periodic relief nucleation on the silicon surface irradiated with a 30 keV focused beam of gallium ions at ion beam incidence angles θ = 30°, 40°, and 50°. It is shown that the following factors initiate the origin of periodic relief: gallium precipitates in the near-surface silicon layer (θ = 30°), topographic inhomogeneity in the form of a hole at the boundary of the bottom, and the frontal wall of the sputtering crater (θ = 40° and 50°).