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Abstract <p>Indium–gallium–zinc oxide (IGZO) with an increased indium content is synthesized using a solid-state reaction. The aim of the study is to synthesize IGZO compositions with a high concentration of indium ions (In<sub>1.5</sub>Ga<sub>0.5</sub>Zn<sub>2</sub>O<sub>5</sub>, In<sub>1.2</sub>Ga<sub>0.8</sub>ZnO<sub>4</sub>, In<sub>2</sub>Ga<sub>2</sub>ZnO<sub>7</sub>) and to investigate their morphology and phase composition. An increase in the indium concentration in the material increases its conductivity due to an increased mobility of charge carriers. Oxide samples are synthesized under various temperature conditions, and their structure is examined by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results show that the In<sub>1.5</sub>Ga<sub>0.5</sub>Zn<sub>2</sub>O<sub>5</sub> and In<sub>1.2</sub>Ga<sub>0.8</sub>ZnO<sub>4</sub> samples are single-phase, and impurity phases are detected in the In<sub>2</sub>Ga<sub>2</sub>ZnO<sub>7</sub> sample, indicating the need for further optimization of the synthesis conditions. Morphological analysis confirms a uniform distribution of elements (indium, gallium, zinc) on the sample surfaces, indicating high material homogeneity. Energy-dispersive X-ray spectroscopy (EDX) analysis demonstrates the actual chemical composition. The obtained data can be useful for the development of new materials for electronic devices.</p>

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Synthesis of Indium–Gallium–Zinc Oxide with an Increased Indium Content by Solid-State Reaction

  • 期刊论文

  • 发表日期：

    2025年2月1日

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  • A. Kovalev,
  • D. Sherstyuk,
  • D. Vinnik,
  • G. Zirnik

摘要

Abstract

Indium–gallium–zinc oxide (IGZO) with an increased indium content is synthesized using a solid-state reaction. The aim of the study is to synthesize IGZO compositions with a high concentration of indium ions (In1.5Ga0.5Zn2O5, In1.2Ga0.8ZnO4, In2Ga2ZnO7) and to investigate their morphology and phase composition. An increase in the indium concentration in the material increases its conductivity due to an increased mobility of charge carriers. Oxide samples are synthesized under various temperature conditions, and their structure is examined by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results show that the In1.5Ga0.5Zn2O5 and In1.2Ga0.8ZnO4 samples are single-phase, and impurity phases are detected in the In2Ga2ZnO7 sample, indicating the need for further optimization of the synthesis conditions. Morphological analysis confirms a uniform distribution of elements (indium, gallium, zinc) on the sample surfaces, indicating high material homogeneity. Energy-dispersive X-ray spectroscopy (EDX) analysis demonstrates the actual chemical composition. The obtained data can be useful for the development of new materials for electronic devices.