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Abstract <p>The electronic structure of single-walled chiral GaN (8, <i>n</i><sub>2</sub>) nanotubes, where <i>n</i><sub>2</sub> = 1–7, was studied by the nonempirical relativistic augmented cylindrical wave method. It was established that all systems are semiconductors with a band gap of 1–2 eV. The spin–orbit splitting amounts to 3–13 meV for the valence band top and 1–10 meV for the conduction band bottom. The highest spin selectivity efficiency is observed for (8, 1) and (8, 2) nanotubes in which the predominant α-transport and high spin–orbit splitting (&gt;10 meV) generate the optimal conditions for spin filters.</p>

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Influence of Chirality on the Spin Transport in GaN (8, n2) Nanotubes

  • 期刊论文

  • 发表日期：

    2025年11月1日

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  • V. B. Merinov,
  • P. A. Kulyamin,
  • P. N. D’yachkov

摘要

Abstract

The electronic structure of single-walled chiral GaN (8, n2) nanotubes, where n2 = 1–7, was studied by the nonempirical relativistic augmented cylindrical wave method. It was established that all systems are semiconductors with a band gap of 1–2 eV. The spin–orbit splitting amounts to 3–13 meV for the valence band top and 1–10 meV for the conduction band bottom. The highest spin selectivity efficiency is observed for (8, 1) and (8, 2) nanotubes in which the predominant α-transport and high spin–orbit splitting (>10 meV) generate the optimal conditions for spin filters.