Abstract <p>The phase formation, morphology, and optical properties of aluminum oxynitride (Al<sub>5</sub>O<sub>6</sub>N) doped with 0.01–5.0 at % of vanadium ions (relative to aluminum) have been studied. All samples fabricated by calcining mixtures of Al<sub>2</sub>O<sub>3</sub>, AlN, and V<sub>2</sub>O<sub>5</sub> at 1750°C in a nitrogen flow are practically single-phase γ-AlON with minor impurities of aluminum nitride, as well as VC, VN, VO, or their solid solutions at a vanadium content of ≥0.1 at %. In AlON:V, the band gap <i>E</i><sub>g</sub> = 5.82–5.94 eV varies depending on the vanadium concentration. The luminescence of AlON:V is due to intrinsic defects and impurity luminescence centers. The presence of vanadium in AlON leads to an increase in the optical absorption and a decrease in the intensity of intrinsic luminescence because of the formation of vanadium-containing impurity phases.</p>

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Phase Formation and Optical Properties of Vanadium-Doped Aluminum Oxynitride

  • A. V. Ishchenko,
  • N. S. Akhmadullina,
  • I. I. Leonidov,
  • V. P. Sirotinkin,
  • I. A. Weinstein,
  • Yu. F. Kargin

摘要

Abstract

The phase formation, morphology, and optical properties of aluminum oxynitride (Al5O6N) doped with 0.01–5.0 at % of vanadium ions (relative to aluminum) have been studied. All samples fabricated by calcining mixtures of Al2O3, AlN, and V2O5 at 1750°C in a nitrogen flow are practically single-phase γ-AlON with minor impurities of aluminum nitride, as well as VC, VN, VO, or their solid solutions at a vanadium content of ≥0.1 at %. In AlON:V, the band gap Eg = 5.82–5.94 eV varies depending on the vanadium concentration. The luminescence of AlON:V is due to intrinsic defects and impurity luminescence centers. The presence of vanadium in AlON leads to an increase in the optical absorption and a decrease in the intensity of intrinsic luminescence because of the formation of vanadium-containing impurity phases.