Studies of Structural, Dielectric, and Electrical Properties of CaWO4 Scheelite for Device Technology
摘要
A high-temperature solid-state technique was used to fabricate a scheelite compound and study its energy storage capacity. The influence of sintering temperature on dielectric, structural, and morphological characteristics is discussed. The X-ray diffraction study revealed the tetragonal symmetry. The average size of crystallites is determined to be approximately 29 nm. The findings validate that a temperature of 1100°C is optimal for oxide synthesis. A study of scanning electron micrographs reveals a distinctive microstructure featuring a combination of large and small grains. The dielectric and impedance performance of the sample is examined over a frequency range from 1 kHz to 1 MHz at a specific temperature range from 25 to 450°C. The ac conductivity analysis offers insights into the conduction mechanism and the semiconducting properties of the compound. The current-voltage characteristics indicate the existence of Ohmic behaviour and trap-free conduction in the conductivity of the material. The significant dielectric loss observed at elevated sintering temperatures is attributed to the crucial role temperature plays in substantially improving dielectric performance, making it suitable for application in microwave devices.