Abstract <p>Magnetic skyrmions have great potential for application in next-generation spintronics devices. However, their controlled generation and manipulation remains a challenging scientific and technical problem. In this paper, we propose a skyrmion generation method based on a combination of a geometric notch and a nucleation region with modified magnetic properties. The transformation dynamics of a chiral domain wall into a skyrmion under the action of a spin-polarized current is investigated. Micromagnetic simulations have shown that the presence of an additional square notch allows for a reduction of the critical current density by 24% (from ~7.9&#xa0;× 10<sup>12</sup> to 6.0 × 10<sup>12</sup> A/m<sup>2</sup>) compared with the case of presence of only the nucleation region, ensuring stable generation of skyrmions with a frequency of up to 1 GHz at a minimum critical current, and up to 4&#xa0;GHz at <i>j</i>&#xa0;=&#xa0;10 × 10<sup>12</sup> A/m<sup>2</sup>. The results obtained open up prospects for the development of energy-efficient skyrmion-based devices for information storage and processing.</p>

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Generation of Magnetic Skyrmions by a Spin-Polarized Current

  • T. A. Taaev,
  • K. Sh. Khizriev,
  • A. K. Murtazaev

摘要

Abstract

Magnetic skyrmions have great potential for application in next-generation spintronics devices. However, their controlled generation and manipulation remains a challenging scientific and technical problem. In this paper, we propose a skyrmion generation method based on a combination of a geometric notch and a nucleation region with modified magnetic properties. The transformation dynamics of a chiral domain wall into a skyrmion under the action of a spin-polarized current is investigated. Micromagnetic simulations have shown that the presence of an additional square notch allows for a reduction of the critical current density by 24% (from ~7.9 × 1012 to 6.0 × 1012 A/m2) compared with the case of presence of only the nucleation region, ensuring stable generation of skyrmions with a frequency of up to 1 GHz at a minimum critical current, and up to 4 GHz at j = 10 × 1012 A/m2. The results obtained open up prospects for the development of energy-efficient skyrmion-based devices for information storage and processing.