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Abstract <p>his work presents an analytical investigation of photothermal effects in a semiconducting strip containing a traction-free crack under antiplane shear deformation. A novel coupling between mechanical displacement, temperature field, and carrier density is considered under constant thermal loading at the upper boundary, extending traditional antiplane crack models. Solutions for displacement, temperature, carrier density, and shear stresses are obtained using Fourier transform techniques within the frameworks of Lord–Shulman, Green-Lindsay, and Classical Coupled Thermoelasticity theories. Numerical evaluations performed via MATLAB reveal pronounced differences among the three models, particularly in the attenuation of temperature and stress fields near the crack tip due to thermal relaxation effects. These results provide new insights into the thermomechanical behavior of semiconductor materials with defects, offering a foundation for improving the design of optoelectronic and microelectromechanical systems under combined thermal and mechanical loading.</p>

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Photothermal Response of a Cracked Semiconductor Strip Under Antiplane Shear Deformation

  • 期刊论文

  • 发表日期：

    2025年8月26日

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  • Praveen Ailawalia,
  • Alwaleed Kamel,
  • Amr M. S. Mahdy,
  • Kh. Lotfy,
  • Abhilasha Saini

摘要

Abstract

his work presents an analytical investigation of photothermal effects in a semiconducting strip containing a traction-free crack under antiplane shear deformation. A novel coupling between mechanical displacement, temperature field, and carrier density is considered under constant thermal loading at the upper boundary, extending traditional antiplane crack models. Solutions for displacement, temperature, carrier density, and shear stresses are obtained using Fourier transform techniques within the frameworks of Lord–Shulman, Green-Lindsay, and Classical Coupled Thermoelasticity theories. Numerical evaluations performed via MATLAB reveal pronounced differences among the three models, particularly in the attenuation of temperature and stress fields near the crack tip due to thermal relaxation effects. These results provide new insights into the thermomechanical behavior of semiconductor materials with defects, offering a foundation for improving the design of optoelectronic and microelectromechanical systems under combined thermal and mechanical loading.