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Abstract <p>Thin amorphous films of hydrogenated silicon carbonitride are prepared in a high-frequency plasma reactor using hexamethyldisilazane vapor and helium. SiC<sub><i>x</i></sub>N<sub><i>y</i></sub>:H films of various compositions are deposited by varying the substrate temperature and the precursor pressure in the reactor chamber. The dependences of growth rate, elemental composition, chemical structure, refractive index, and dielectric constant of the films on synthesis conditions are determined. Gas species are studied by optical emission spectroscopy. It is shown by HRTEM and EDS mapping methods that the annealed Cu/SiCNH/Si(100) sample has distinct substrate/SiCNH and SiCNH/copper interfaces; the copper diffusion was not registered. Thin SiCNH films with a low k value can be considered as a promising diffusion barrier layer for modern microcircuits.</p>

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Amorphous Dielectric SiCNH Films Prepared by PECVD Method from Hexamethyldisilazane Vapors

  • 期刊论文

  • 发表日期：

    2025年11月1日

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  • E. N. Ermakova,
  • A. G. Plekhanov,
  • V. R. Shayapov,
  • V. S. Sulyaeva,
  • E. A. Maksimovsky,
  • D. E. Petukhova,
  • A. A. Saraev,
  • E. Y. Gerasimov,
  • V. V. Kirienko,
  • M. N. Khomyakov,
  • M. L. Kosinova

摘要

Abstract

Thin amorphous films of hydrogenated silicon carbonitride are prepared in a high-frequency plasma reactor using hexamethyldisilazane vapor and helium. SiCxNy:H films of various compositions are deposited by varying the substrate temperature and the precursor pressure in the reactor chamber. The dependences of growth rate, elemental composition, chemical structure, refractive index, and dielectric constant of the films on synthesis conditions are determined. Gas species are studied by optical emission spectroscopy. It is shown by HRTEM and EDS mapping methods that the annealed Cu/SiCNH/Si(100) sample has distinct substrate/SiCNH and SiCNH/copper interfaces; the copper diffusion was not registered. Thin SiCNH films with a low k value can be considered as a promising diffusion barrier layer for modern microcircuits.