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Abstract <p>A solid-phase synthesis of the InGaZn<sub>2</sub>O<sub>5</sub> semiconductor oxide is reported; its phase composition, structure, and morphology are analyzed using XRD, full-profile XRD analysis, scanning electron microscopy, energy-dispersive X-ray spectroscopy, IR spectroscopy, and Raman spectroscopy. It is shown that the studied compound corresponds to the InGaZn<sub>2</sub>O<sub>5</sub> structure, <i>P</i>6<sub>3</sub>/<i>mmc</i> space group; its structural parameters are reported. The sample prepared under the chosen conditions has morphology characterized by polydispersity, presence of agglomerates, and by the absence of pronounced crystallite faceting. IR and Raman spectra of InGaZn<sub>2</sub>O<sub>5</sub> are reported for the first time.</p>

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Synthesis and Analysis of the Indium–Gallium–Zinc Oxide Semiconductor Structure

  • 期刊论文

  • 发表日期：

    2025年2月1日

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  • D. A. Vinnik,
  • A. I. Kovalev,
  • D. P. Sherstyuk,
  • D. E. Zhivulin,
  • G. M. Zirnik,
  • T. V. Batmanova

摘要

Abstract

A solid-phase synthesis of the InGaZn2O5 semiconductor oxide is reported; its phase composition, structure, and morphology are analyzed using XRD, full-profile XRD analysis, scanning electron microscopy, energy-dispersive X-ray spectroscopy, IR spectroscopy, and Raman spectroscopy. It is shown that the studied compound corresponds to the InGaZn2O5 structure, P63/mmc space group; its structural parameters are reported. The sample prepared under the chosen conditions has morphology characterized by polydispersity, presence of agglomerates, and by the absence of pronounced crystallite faceting. IR and Raman spectra of InGaZn2O5 are reported for the first time.