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<p>The effects of localization of nonequilibrium holes in degenerate epitaxial <i>n</i>-InGaN films with a high (~60%) indium content, which emit in the near-infrared region, are investigated. Using the photoluminescence spectroscopy data with the picosecond time resolution, the energy scales of the tails of the bands, the localization energy, and the width of the distribution of nonequilibrium holes in the random potential relief have been determined. Within the model of recombination of free electrons and localized holes, the character of the temperature quenching of emission and the red shift of the generation wavelength relative to spontaneous emission have been explained.</p>

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Ultrafast Luminescence Kinetics and Localization Effects of Nonequilibrium Carriers in Degenerate n-InGaN Layers

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年4月1日

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  • K. E. Kudryavtsev,
  • D. N. Lobanov,
  • M. A. Kalinnikov,
  • A. V. Novikov,
  • B. A. Andreev,
  • Z. F. Krasil’nik

摘要

The effects of localization of nonequilibrium holes in degenerate epitaxial n-InGaN films with a high (~60%) indium content, which emit in the near-infrared region, are investigated. Using the photoluminescence spectroscopy data with the picosecond time resolution, the energy scales of the tails of the bands, the localization energy, and the width of the distribution of nonequilibrium holes in the random potential relief have been determined. Within the model of recombination of free electrons and localized holes, the character of the temperature quenching of emission and the red shift of the generation wavelength relative to spontaneous emission have been explained.