Scholarlink

<p>We present the design and experimental demonstration of a micropillar metamorphic cavity structure with an embedded InAs/InGaAs quantum dot, intended for single-photon generation in the telecommunication C‑band. The microcavity, incorporating a single GaAs/AlGaAs distributed Bragg reflector, is designed to provide a photon extraction efficiency of 15% into a numerical aperture of 0.7. The structure, fabricated by molecular beam epitaxy, photolithography, and plasma-enhanced chemical etching, exhibited an average C‑band photon emission rate of <InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11448_2025_4106_Article_IEq1.gif" Format="GIF" Height="6" Rendition="HTML" Resolution="72" Type="Linedraw" Width="17" /> </InlineMediaObject> <EquationSource Format="TEX">\( \sim \)</EquationSource> <!--JETPLet2460511Veretennikov-m1--> </InlineEquation>1 MHz at the first lens with a second-order correlation function of <InlineEquation ID="IEq2"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="11448_2025_4106_Article_IEq2.gif" Format="GIF" Height="21" Rendition="HTML" Resolution="72" Type="Linedraw" Width="47" /> </InlineMediaObject> <EquationSource Format="TEX">\({{g}^{{(2)}}}(0)\)</EquationSource> <!--JETPLet2460511Veretennikov-m2--> </InlineEquation>&#xa0;= 0.14.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Single-Photon Emission in the Telecom C-Band in a Micropillar Cavity with an InAs/InGaAs Quantum Dot

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年1月27日

查看全文
  • A. I. Veretennikov,
  • M. V. Rakhlin,
  • Yu. M. Serov,
  • A. I. Galimov,
  • G. P. Veyshtort,
  • S. V. Sorokin,
  • G. V. Klimko,
  • I. V. Sedova,
  • N. A. Maleev,
  • M. A. Bobrov,
  • A. P. Vasiliev,
  • A. G. Kuzmenkov,
  • M. M. Kulagina,
  • Yu. M. Zadiranov,
  • S. I. Troshkov,
  • Yu. A. Salii,
  • D. S. Berezina,
  • E. V. Nikitina,
  • A. A. Toropov

摘要

We present the design and experimental demonstration of a micropillar metamorphic cavity structure with an embedded InAs/InGaAs quantum dot, intended for single-photon generation in the telecommunication C‑band. The microcavity, incorporating a single GaAs/AlGaAs distributed Bragg reflector, is designed to provide a photon extraction efficiency of 15% into a numerical aperture of 0.7. The structure, fabricated by molecular beam epitaxy, photolithography, and plasma-enhanced chemical etching, exhibited an average C‑band photon emission rate of \( \sim \) 1 MHz at the first lens with a second-order correlation function of \({{g}^{{(2)}}}(0)\)  = 0.14.