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<p>Heterostructures with InAs/InGaAs quantum dots and In<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>As/GaAs(001) metamorphic buffer layers are grown by molecular-beam epitaxy. The structures are designed to obtain single-photon emission in the telecommunication C-band wavelength range. The possibility of reducing the thickness of the In<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>As graded layer in order to form efficient microcavity structures with a cavity length as small as two wavelengths is examined. The structures with metamorphic buffer layers grown on top of an Al<sub>0.9</sub>Ga<sub>0.1</sub>As/GaAs distributed Bragg reflector are grown and characterized by cross-sectional transmission electron microscopy and photoluminescence spectroscopy.</p>

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Metamorphic InAs/InGaAs Quantum Dot Heterostructures for Single-Photon Generation in the C-Band Spectral Range

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  • 出版模式：

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  • 发表日期：

    2025年1月1日

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  • S. V. Sorokin,
  • G. V. Klimko,
  • I. V. Sedova,
  • O. E. Lakuntsova,
  • A. I. Galimov,
  • Yu. M. Serov,
  • A. I. Veretennikov,
  • L. A. Snigirev,
  • A. A. Toropov

摘要

Heterostructures with InAs/InGaAs quantum dots and InxGa1–xAs/GaAs(001) metamorphic buffer layers are grown by molecular-beam epitaxy. The structures are designed to obtain single-photon emission in the telecommunication C-band wavelength range. The possibility of reducing the thickness of the InxGa1–xAs graded layer in order to form efficient microcavity structures with a cavity length as small as two wavelengths is examined. The structures with metamorphic buffer layers grown on top of an Al0.9Ga0.1As/GaAs distributed Bragg reflector are grown and characterized by cross-sectional transmission electron microscopy and photoluminescence spectroscopy.