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Abstact <p>The results of the development and research of semiconductor ionizing-radiation detectors based on <i>p</i>-Si/<i>n</i>-InP heterostructures are presented. The design and technological features of their manufacture are considered, and the results of electrophysical and radiometric measurements are presented. It is shown that the use of a <i>p</i>-Si/<i>n</i>-InP heterojunction provides high sensitivity at low noise and reverse-current levels. The developed heterostructure demonstrates new possibilities for the effective detection under conditions of an increased radiation load, which is especially relevant for experiments at particle accelerators. The manufactured detectors with a large active-region area are designed to detect low-intensity ionizing radiation fluxes, which confirms their prospects for use in nuclear physics, radiation monitoring, and environmental monitoring systems.</p>

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Development and Investigation of Semiconductor Detectors of Ionizing Radiation Based on p-Si/n-InP Heterostructures

  • 期刊论文

  • 发表日期：

    2026年2月1日

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  • S. A. Radzhapov,
  • A. S. Saidov,
  • Sh. N. Usmonov,
  • B. S. Radzhapov

摘要

Abstact

The results of the development and research of semiconductor ionizing-radiation detectors based on p-Si/n-InP heterostructures are presented. The design and technological features of their manufacture are considered, and the results of electrophysical and radiometric measurements are presented. It is shown that the use of a p-Si/n-InP heterojunction provides high sensitivity at low noise and reverse-current levels. The developed heterostructure demonstrates new possibilities for the effective detection under conditions of an increased radiation load, which is especially relevant for experiments at particle accelerators. The manufactured detectors with a large active-region area are designed to detect low-intensity ionizing radiation fluxes, which confirms their prospects for use in nuclear physics, radiation monitoring, and environmental monitoring systems.