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Abstract <p>The process of switching a powerful TDI3-100k/75D thyratron triggered by a semiconductor generator, whose output pulse has a small jitter (∼3 ns) relative to the moment of application of a control pulse and ensures a high rise rate of the triggering voltage pulses (∼4 kV/ns) and triggering current pulses (∼100&#xa0;A/ns), is investigated. It is shown that with such switching, the jitter of the thyratron triggering current pulse relative to the triggering voltage pulse is less than 1 ns, while the jitter of the power-current pulse front edge through the thyratron relative to the triggering current pulse does not exceed 5 ns with both positive and negative anode potentials, when the thyratron is triggered from the cathode or anode side, respectively.</p>

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Study of the Switching Process of a Bidirectional Thyratron Triggered by High Voltage Pulses with a Nanosecond Front Edge

  • 期刊论文

  • 发表日期：

    2025年4月1日

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  • S. V. Korotkov,
  • A. L. Zhmodikov,
  • D. A. Korotkov

摘要

Abstract

The process of switching a powerful TDI3-100k/75D thyratron triggered by a semiconductor generator, whose output pulse has a small jitter (∼3 ns) relative to the moment of application of a control pulse and ensures a high rise rate of the triggering voltage pulses (∼4 kV/ns) and triggering current pulses (∼100 A/ns), is investigated. It is shown that with such switching, the jitter of the thyratron triggering current pulse relative to the triggering voltage pulse is less than 1 ns, while the jitter of the power-current pulse front edge through the thyratron relative to the triggering current pulse does not exceed 5 ns with both positive and negative anode potentials, when the thyratron is triggered from the cathode or anode side, respectively.