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Abstract <p>The effect of annealing in a selenium atmosphere (supplementary step) on the defect structure and decay kinetics of photogenerated current carriers in CuGaSe<sub>2</sub> and AgGaSe<sub>2</sub> chalcopyrite powders has been studied. It has been shown that supplementary annealing in selenium vapor has different effects depending on the powder composition: CuGaSe<sub>2</sub> is characterized by a change in trap depth, which leads to a slight decrease in the photogenerated carrier lifetimes, whereas AgGaSe<sub>2</sub> is characterized by a decrease in the number of defects, which leads to an increase in the lifetimes.</p>

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Effect of Annealing on the Defect Structure and Decay Kinetics of Photogenerated Current Carriers in CuGaSe2 and AgGaSe2 Chalcopyrites

  • 期刊论文

  • 发表日期：

    2026年2月1日

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  • V. V. Rakitin,
  • E. V. Rabenok,
  • D. S. Lutsenko,
  • I. D. Kulemetyev,
  • A. V. Stanchik,
  • M. V. Gapanovich

摘要

Abstract

The effect of annealing in a selenium atmosphere (supplementary step) on the defect structure and decay kinetics of photogenerated current carriers in CuGaSe2 and AgGaSe2 chalcopyrite powders has been studied. It has been shown that supplementary annealing in selenium vapor has different effects depending on the powder composition: CuGaSe2 is characterized by a change in trap depth, which leads to a slight decrease in the photogenerated carrier lifetimes, whereas AgGaSe2 is characterized by a decrease in the number of defects, which leads to an increase in the lifetimes.