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<p>The temperature coefficient of resistance (TCR) is a fundamental material property. Semiconductors with a high TCR are promising for high-resolution thermal imaging in autonomous systems, precision temperature sensing and neuromorphic computing. However, near room temperature, the TCR of conventional thermal imaging materials, such as vanadium oxide and amorphous silicon, typically remains below 5% per kelvin. Here we demonstrate a voltage-tunable TCR of up to 150% per kelvin near 300 K in a two-terminal InP/InGaAs n–p–n transistor, enabled by an internal coherent carrier-feedback mechanism. Current amplification in this device arises from the interplay between temperature-dependent transistor gain and avalanche multiplication, thus forming a regenerative loop that produces a large, bias-tunable TCR. These results illustrate how device-level engineering can exceed the intrinsic material limits on temperature sensitivity and highlight the importance of developing biasing-circuit architectures to fully exploit this capability.</p>

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Bias-tunable temperature coefficient amplification beyond material limits in a single transistor

  • 期刊论文

  • 发表日期：

    2026年4月17日

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  • Jiazhen Chen,
  • Yihao Song,
  • David Alexander Montealegre,
  • Mingyang Cai,
  • Minjoo Larry Lee,
  • Fengnian Xia

摘要

The temperature coefficient of resistance (TCR) is a fundamental material property. Semiconductors with a high TCR are promising for high-resolution thermal imaging in autonomous systems, precision temperature sensing and neuromorphic computing. However, near room temperature, the TCR of conventional thermal imaging materials, such as vanadium oxide and amorphous silicon, typically remains below 5% per kelvin. Here we demonstrate a voltage-tunable TCR of up to 150% per kelvin near 300 K in a two-terminal InP/InGaAs n–p–n transistor, enabled by an internal coherent carrier-feedback mechanism. Current amplification in this device arises from the interplay between temperature-dependent transistor gain and avalanche multiplication, thus forming a regenerative loop that produces a large, bias-tunable TCR. These results illustrate how device-level engineering can exceed the intrinsic material limits on temperature sensitivity and highlight the importance of developing biasing-circuit architectures to fully exploit this capability.