Scholarlink

<p>The integration of lighter materials with low intrinsic spin-orbit coupling (SOC) in spintronics devices has recently been proven to be noteworthy. Here we demonstrate the direct efficient spin-orbital pumping into the low SOC CuO<sub><i>x</i></sub> and C<sub>60</sub> layers from amorphous CoFeB. Further, the C<sub>60</sub> capping layer (CL) significantly enhances the magnetization relaxation process compared to the CuO<sub><i>x</i></sub> in <i>β</i>-W/CoFeB/CL heterostructures, while the static magnetic properties remain indifferent irrespective of the nature of CL. Interestingly, the spin-orbital to charge conversion phenomenon is found to be enhanced by 67% for <i>β</i>-W/CoFeB/CuO<sub><i>x</i></sub> stacking compared to <i>β</i>-W/CoFeB/C<sub>60</sub> heterostructure, signifying the anti-correlation between the magnetic damping and spin-orbital to charge conversion. The results are interpreted by interfacial phenomena, like the orbital Rashba effect, two-magnon scattering, and interfacial spin memory loss. Our detailed experimental investigations shed light on the importance of low SOC materials in effectively tuning the magnetization dynamics for the development of future power-efficient spintronics devices.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Significant influence of low SOC materials on magnetization dynamics and spin-orbital to charge conversion

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年5月28日

查看全文
  • Antarjami Sahoo,
  • Swayang Priya Mahanta,
  • Subhankar Bedanta

摘要

The integration of lighter materials with low intrinsic spin-orbit coupling (SOC) in spintronics devices has recently been proven to be noteworthy. Here we demonstrate the direct efficient spin-orbital pumping into the low SOC CuOx and C60 layers from amorphous CoFeB. Further, the C60 capping layer (CL) significantly enhances the magnetization relaxation process compared to the CuOx in β-W/CoFeB/CL heterostructures, while the static magnetic properties remain indifferent irrespective of the nature of CL. Interestingly, the spin-orbital to charge conversion phenomenon is found to be enhanced by 67% for β-W/CoFeB/CuOx stacking compared to β-W/CoFeB/C60 heterostructure, signifying the anti-correlation between the magnetic damping and spin-orbital to charge conversion. The results are interpreted by interfacial phenomena, like the orbital Rashba effect, two-magnon scattering, and interfacial spin memory loss. Our detailed experimental investigations shed light on the importance of low SOC materials in effectively tuning the magnetization dynamics for the development of future power-efficient spintronics devices.