Solution-processed thin-film perovskites for high-performance optoelectronics
摘要
Semiconducting metal-halide perovskites have exceptional optoelectronic properties such as high photoluminescence quantum efficiencies and tunable bandgaps. These thin-film perovskites can also be fabricated cost-effectively through solution processing, making them highly attractive for photovoltaics and light-emitting diodes. In this Review, we examine the relationship between film formation and device performance in perovskite optoelectronics. The operational principles of these devices are tightly linked to the quality and morphology of the thin-film perovskite. Unlike conventional semiconductors such as silicon or organic molecules, perovskite film formation involves precursor preparation, coating, reaction and crystallization. Secondary bonding interactions regulate crystallization kinetics and defect passivation, offering a powerful strategy to modulate film growth. The stability of perovskite optoelectronic devices is governed by the thin-film quality established during film formation. We propose that a synergy between primary and secondary bonds enhances intrinsic stability, enabling stable transport materials to overcome the key industrial bottleneck of a long-term operational lifetime.