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<p>Molybdenum disulfide (MoS<sub>2</sub>) field-effect transistors with high-<i>k</i> oxides lag behind silicon standards in stability due to traps causing clockwise hysteresis. While suppressing this effect is mandatory for logic devices, here we show an alternative strategy where initial hysteresis is dynamically overcome by stronger counterclockwise hysteresis coupled with memory-like transient negative differential resistance. We compare back-gated transistors using HfO<sub>2</sub> and Al<sub>2</sub>O<sub>3</sub> gate insulators up to 275 °C. At 175 °C, devices with HfO<sub>2</sub> exhibit dominant counterclockwise dynamics and transient negative differential resistance. Our compact model suggests this behavior is caused by the drift of mobile oxygen vacancies within HfO<sub>2</sub>. This mechanism overrides initial hysteresis, revealing a pathway to memory-like functionality enhanced by narrower voltage sweep ranges. In contrast, transistors gated with Al<sub>2</sub>O<sub>3</sub> display only minor counterclockwise dynamics even at 275 °C due to higher vacancy migration barriers, maintaining superior stability. Our results reveal an insulator selection paradigm: Al<sub>2</sub>O<sub>3</sub> is better suited for logic devices, whereas HfO<sub>2</sub> counterparts can serve as active layers for memory components.</p>

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Mobile charges in MoS2/high-k oxide transistors: from abnormal instabilities to transient negative differential resistance

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年7月2日

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  • Shaokai Zhou,
  • Haihui Cai,
  • Yehao Wu,
  • Yufeng Min,
  • Renchen Yuan,
  • Yezhu Lv,
  • Jianming Huang,
  • Yuanyuan Shi,
  • Yury Yuryevich Illarionov

摘要

Molybdenum disulfide (MoS2) field-effect transistors with high-k oxides lag behind silicon standards in stability due to traps causing clockwise hysteresis. While suppressing this effect is mandatory for logic devices, here we show an alternative strategy where initial hysteresis is dynamically overcome by stronger counterclockwise hysteresis coupled with memory-like transient negative differential resistance. We compare back-gated transistors using HfO2 and Al2O3 gate insulators up to 275 °C. At 175 °C, devices with HfO2 exhibit dominant counterclockwise dynamics and transient negative differential resistance. Our compact model suggests this behavior is caused by the drift of mobile oxygen vacancies within HfO2. This mechanism overrides initial hysteresis, revealing a pathway to memory-like functionality enhanced by narrower voltage sweep ranges. In contrast, transistors gated with Al2O3 display only minor counterclockwise dynamics even at 275 °C due to higher vacancy migration barriers, maintaining superior stability. Our results reveal an insulator selection paradigm: Al2O3 is better suited for logic devices, whereas HfO2 counterparts can serve as active layers for memory components.