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<p>The data processing demands of the digital era have exposed limitations in conventional memory architectures. Gain cell-embedded dynamic random-access memory based on oxide semiconductors is emerging as a solution, addressing scalability, power efficiency, and integration density challenges. Our review highlights that oxide semiconductors offer exceptional properties for gain cell memory applications, including ultra-low leakage currents and wide bandgap characteristics, while their advanced structures like gate-all-around and channel-all-around stacked architectures demonstrate the potential for high-density integration. While challenges in manufacturing and reliability persist, this paradigm shift in memory design holds promise for reshaping computing systems for artificial intelligence and advanced computing applications.</p><p></p>

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Oxide semiconductor gain cell-embedded memory: materials and integration strategies for next generation on-chip memory

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年2月23日

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  • Sang Won Chung,
  • Seong Hun Yoon,
  • Jae Kyeong Jeong

摘要

The data processing demands of the digital era have exposed limitations in conventional memory architectures. Gain cell-embedded dynamic random-access memory based on oxide semiconductors is emerging as a solution, addressing scalability, power efficiency, and integration density challenges. Our review highlights that oxide semiconductors offer exceptional properties for gain cell memory applications, including ultra-low leakage currents and wide bandgap characteristics, while their advanced structures like gate-all-around and channel-all-around stacked architectures demonstrate the potential for high-density integration. While challenges in manufacturing and reliability persist, this paradigm shift in memory design holds promise for reshaping computing systems for artificial intelligence and advanced computing applications.