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<p>Wurtzite aluminum–scandium nitride thin films hold strong potential for future electronic and sensing technologies. However, achieving precise control and uniform coverage across complex three-dimensional architectures remains challenging. Here, we demonstrate aluminum–scandium nitride growth by plasma-enhanced atomic layer deposition, a layer-by-layer technique that provides atomic-scale control over film thickness, composition and structure. Films grown on {111}-oriented platinum exhibit clear ferroelectric switching, with coercive fields as low as ±3.3 MV cm<sup>−1</sup>. They align exclusively along the c-axis, indicating high structural order even on the sidewalls of three-dimensional features. When deposited on single-crystal gallium nitride, the films adopt a highly ordered arrangement both in and out of the surface plane, consistent with epitaxial growth. Imaging of films deposited over narrow trenches further confirms uniform, conformal coating of three-dimensional structures. Together, these results demonstrate that this growth method yields high-quality aluminum–scandium nitride films suitable for advanced three-dimensional electronic and sensing applications.</p>

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Ferroelectric aluminum−scandium nitride by plasma-enhanced atomic layer deposition under ultrahigh purity conditions

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年6月26日

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  • Gilbert B. Rayner Jr,
  • Noel O’Toole,
  • Nathaniel Nelson,
  • Bangzhi Liu,
  • Jeffrey Shallenberger,
  • Gregory Muha,
  • Piush Behera,
  • Suraj Cheema,
  • Blaine Johs,
  • Nastazia Moshirfatemi,
  • Daniel Drury,
  • Brendan M. Hanrahan,
  • Glen R. Fox,
  • Nicholas A. Strnad

摘要

Wurtzite aluminum–scandium nitride thin films hold strong potential for future electronic and sensing technologies. However, achieving precise control and uniform coverage across complex three-dimensional architectures remains challenging. Here, we demonstrate aluminum–scandium nitride growth by plasma-enhanced atomic layer deposition, a layer-by-layer technique that provides atomic-scale control over film thickness, composition and structure. Films grown on {111}-oriented platinum exhibit clear ferroelectric switching, with coercive fields as low as ±3.3 MV cm−1. They align exclusively along the c-axis, indicating high structural order even on the sidewalls of three-dimensional features. When deposited on single-crystal gallium nitride, the films adopt a highly ordered arrangement both in and out of the surface plane, consistent with epitaxial growth. Imaging of films deposited over narrow trenches further confirms uniform, conformal coating of three-dimensional structures. Together, these results demonstrate that this growth method yields high-quality aluminum–scandium nitride films suitable for advanced three-dimensional electronic and sensing applications.