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<p>Bismuth-based compounds, such as Bi1<sub>-x</sub>Sb<sub>x</sub> or Bi<sub>2</sub>Te<sub>3</sub>, have outstanding electronic properties especially for advanced quantum devices. However, the potential of low-dimensional group V-Bi materials is largely undetermined. Here, we report the experimental realization of a two-dimensional (2D) BiAs layer with giant Rashba spin splitting, grown on an InAs(111)B substrate via molecular beam epitaxy. ARPES reveals the emergence of a prominent M-shaped band structure and a distinct electron pocket at the Fermi level. DFT, complemented by synchrotron-based XPS, LEED, and STM, confirms strong spin-orbit coupling and a giant Rashba coefficient of these electronic states. An As overlayer, remaining from the fabrication process, preserves a structural shift between substrate and BiAs layer, essential for the Rashba splitting, while preventing undesirable reconstruction. This indicates how well-known capping techniques can stabilize new 2D compounds with interesting electronic structures, especially BiAs, a promising candidate to open possibilities for next-generation spintronic devices and field-effect transistors.</p>

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Giant Rashba splitting in a 2D BiAs layer on InAs(111)B

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年5月12日

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  • Sandra Benter,
  • Renan Da Paixao Maciel,
  • Sébastien Plissard,
  • Rohit Yadav,
  • Marco Bianchi,
  • Philip Hofmann,
  • Craig Polley,
  • Chin Shen Ong,
  • Olle Eriksson,
  • Rainer Timm,
  • Anders Mikkelsen

摘要

Bismuth-based compounds, such as Bi1-xSbx or Bi2Te3, have outstanding electronic properties especially for advanced quantum devices. However, the potential of low-dimensional group V-Bi materials is largely undetermined. Here, we report the experimental realization of a two-dimensional (2D) BiAs layer with giant Rashba spin splitting, grown on an InAs(111)B substrate via molecular beam epitaxy. ARPES reveals the emergence of a prominent M-shaped band structure and a distinct electron pocket at the Fermi level. DFT, complemented by synchrotron-based XPS, LEED, and STM, confirms strong spin-orbit coupling and a giant Rashba coefficient of these electronic states. An As overlayer, remaining from the fabrication process, preserves a structural shift between substrate and BiAs layer, essential for the Rashba splitting, while preventing undesirable reconstruction. This indicates how well-known capping techniques can stabilize new 2D compounds with interesting electronic structures, especially BiAs, a promising candidate to open possibilities for next-generation spintronic devices and field-effect transistors.