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<p>Oxide-based memristors are promising candidates as neuromorphic hardware in energy-efficient edge computing applications for the Internet of Things (IoT). However, achieving simultaneously optimized memristive and synaptic performance with low-temperature fabrication, compatible with complementary metal-oxide-semiconductor (CMOS) processes, remains a challenge. Here, we demonstrate a dual-function electrode selection strategy—controlled oxygen vacancy electrode reservoir—implemented in a simple, low-temperature-fabricated indium tin oxide (ITO)/WO<sub>3</sub>/TiN thin film system. We systematically vary the oxygen stoichiometry in the ITO top electrode, which serves not only as an electrical contact, but also as a dynamic oxygen reservoir. A high oxygen-vacancy concentration in the ITO enables optimized memristive performance of low electroforming and operation voltages, and robust memristive and synaptic endurance. This electrode-focused defect engineering approach offers a versatile route to advanced memristor design, enabling many applications in IoT and neuromorphic systems.</p>

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Controlled oxygen vacancy electrode reservoir for robust WO3-based memory devices

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年4月6日

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  • Ziyi Yuan,
  • Babak Bakhit,
  • Jiahao Lu,
  • Yi-Xuan Liu,
  • Atif Jan,
  • Xinjuan Li,
  • Abin Varghese,
  • Bipin Rajendran,
  • Caterina Ducati,
  • Giuliana Di Martino,
  • Markus Hellenbrand,
  • Judith Louise MacManus-Driscoll

摘要

Oxide-based memristors are promising candidates as neuromorphic hardware in energy-efficient edge computing applications for the Internet of Things (IoT). However, achieving simultaneously optimized memristive and synaptic performance with low-temperature fabrication, compatible with complementary metal-oxide-semiconductor (CMOS) processes, remains a challenge. Here, we demonstrate a dual-function electrode selection strategy—controlled oxygen vacancy electrode reservoir—implemented in a simple, low-temperature-fabricated indium tin oxide (ITO)/WO3/TiN thin film system. We systematically vary the oxygen stoichiometry in the ITO top electrode, which serves not only as an electrical contact, but also as a dynamic oxygen reservoir. A high oxygen-vacancy concentration in the ITO enables optimized memristive performance of low electroforming and operation voltages, and robust memristive and synaptic endurance. This electrode-focused defect engineering approach offers a versatile route to advanced memristor design, enabling many applications in IoT and neuromorphic systems.