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<p>Two-dimensional (2D) van der Waals (vdWs) heterostructures have rapidly become promising platforms for advanced optoelectronic devices, mainly due to their extraordinary capability to control electronic and optical properties at atomically abrupt interfaces. However, realizing high-performance optoelectronics strongly relies on precise engineering at these interfaces to optimize charge carrier generation, transport, and extraction efficiencies. In this work, we present a comprehensive theoretical and experimental study of VP/PdSe<sub>2</sub> vdWs heterostructure targeting photodetector. Our findings indicate that VP/PdSe<sub>2</sub> vdWs heterostructures exhibit a type-I band alignment, enabling photodetection across the visible (VIS) to near infrared (NIR) spectral regions. By introducing graphene as a contact layer (Gr/VP/PdSe<sub>2</sub>), we significantly enhanced device performance, achieving a remarkable responsivity of 111.3 AW<sup>−1</sup> and an external quantum efficiency of 26001%, representing an enhancement of about three orders of magnitude compared to the bare VP/PdSe<sub>2</sub> devices. Moreover, the engineered photodetector demonstrated superior stability, maintaining consistent performance over 100 operational cycles, and an exceptionally fast photoresponse time of approximately 10 ms. Additionally, the device showed robust polarization-sensitive detection capabilities with an impressive dichroism ratio across a broad spectrum. This work paves the way to realize innovative 2D heterostructure for high-performance, multifunctional optoelectronic applications.</p>

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Engineering in 2D violet phosphorus/PdSe2 van der Waals heterostructures for advanced optoelectronics

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年2月26日

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  • Waqas Ahmad,
  • Majeed Ur Rehman,
  • Qiandong Zhuang,
  • Jinying Zhang,
  • Wen Lei,
  • Zhiming Wang,
  • Yury Illarionov

摘要

Two-dimensional (2D) van der Waals (vdWs) heterostructures have rapidly become promising platforms for advanced optoelectronic devices, mainly due to their extraordinary capability to control electronic and optical properties at atomically abrupt interfaces. However, realizing high-performance optoelectronics strongly relies on precise engineering at these interfaces to optimize charge carrier generation, transport, and extraction efficiencies. In this work, we present a comprehensive theoretical and experimental study of VP/PdSe2 vdWs heterostructure targeting photodetector. Our findings indicate that VP/PdSe2 vdWs heterostructures exhibit a type-I band alignment, enabling photodetection across the visible (VIS) to near infrared (NIR) spectral regions. By introducing graphene as a contact layer (Gr/VP/PdSe2), we significantly enhanced device performance, achieving a remarkable responsivity of 111.3 AW−1 and an external quantum efficiency of 26001%, representing an enhancement of about three orders of magnitude compared to the bare VP/PdSe2 devices. Moreover, the engineered photodetector demonstrated superior stability, maintaining consistent performance over 100 operational cycles, and an exceptionally fast photoresponse time of approximately 10 ms. Additionally, the device showed robust polarization-sensitive detection capabilities with an impressive dichroism ratio across a broad spectrum. This work paves the way to realize innovative 2D heterostructure for high-performance, multifunctional optoelectronic applications.