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<p>Two-dimensional (2D) aluminum nitride (AlN) represents a promising material with unique properties predicted by density functional theory (DFT), characterized by a honeycomb lattice where Al and N atoms exhibit threefold in-plane coordination. However, the synthesis of free-standing AlN nanosheets has been challenging due to the crystal configurations of the well-known bulk AlN, which presents a hexagonal wurtzite structure with a tetrahedral coordination, preventing its exfoliation to obtain nanosheets. Herein, we propose a facile method involving the preparation of layered-structured aluminum carbonitrides, Al<sub>5</sub>C<sub>3</sub>N, followed by exfoliation into AlN nanosheets, offering a potential route for producing 2D AlN. The Al<sub>5</sub>C<sub>3</sub>N precursor was chemically etched in hydrofluoric acid (HF), breaking the Al-C bonds and exposing the AlN nanosheets. The development of this synthesis method opens up opportunities towards the preparation of 2D AlN and the investigation of its unique properties for applications in sensors and microelectronics.</p>

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Chemical exfoliation of layered Al5C3N for the synthesis of AlN nanosheets

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年12月8日

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  • Nima Amousa,
  • Melina Poll,
  • Louis Godeffroy,
  • Pedro Berastegui,
  • Norbert H. Nickel,
  • Namrata Sharma,
  • Olivier Donzel-Gargand,
  • Thomas Dittrich,
  • Steffen Fengler,
  • Sebastian Wintz,
  • Tristan Petit,
  • Ulf Jansson,
  • Jesus Gonzalez-Julian

摘要

Two-dimensional (2D) aluminum nitride (AlN) represents a promising material with unique properties predicted by density functional theory (DFT), characterized by a honeycomb lattice where Al and N atoms exhibit threefold in-plane coordination. However, the synthesis of free-standing AlN nanosheets has been challenging due to the crystal configurations of the well-known bulk AlN, which presents a hexagonal wurtzite structure with a tetrahedral coordination, preventing its exfoliation to obtain nanosheets. Herein, we propose a facile method involving the preparation of layered-structured aluminum carbonitrides, Al5C3N, followed by exfoliation into AlN nanosheets, offering a potential route for producing 2D AlN. The Al5C3N precursor was chemically etched in hydrofluoric acid (HF), breaking the Al-C bonds and exposing the AlN nanosheets. The development of this synthesis method opens up opportunities towards the preparation of 2D AlN and the investigation of its unique properties for applications in sensors and microelectronics.