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<p>The growth of two-dimensional epitaxial materials on industrially relevant substrates is critical for enabling their scalable synthesis and integration into next-generation technologies. Here we present a comprehensive study of the molecular beam epitaxial growth of gallium selenide on 2-inch c-plane sapphire substrates. Using in situ reflection high-energy electron diffraction (RHEED), in situ Raman spectroscopy, optical and scanning electron microscopies, we construct a diagram of the gallium selenide growth modes as a function of substrate temperature (530–650 °C) and Se/Ga flux ratio (5–110). The growth mode diagram reveals distinct regimes, including the growth of layered post-transition metal monochalcogenide GaSe with an unstrained in-plane lattice constant of 3.71 ± 0.01 <InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(\dot{{{{\rm{A}}}}}\)</EquationSource> <EquationSource Format="MATHML"><math> <mover accent="true"> <mrow> <mi mathvariant="normal">A</mi> </mrow> <mrow> <mo>°</mo> </mrow> </mover> </math></EquationSource> </InlineEquation> and a partial epitaxial alignment on sapphire. This work demonstrates a RHEED-based pathway for synthesizing gallium selenide of specific phase and morphology, and the construction of a phase diagram for high vapor pressure III-VI compounds that can be applied to a wide range of other metal chalcogenide materials.</p>

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Unveiling the growth mode diagram of GaSe on sapphire

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年12月4日

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  • Michele Bissolo,
  • Marco Dembecki,
  • Jürgen Belz,
  • Jan Schabesberger,
  • Max Bergmann,
  • Pavel Avdienko,
  • Florian Rauscher,
  • Abhilash S. Ulhe,
  • Hubert Riedl,
  • Kerstin Volz,
  • Jonathan J. Finley,
  • Eugenio Zallo,
  • Gregor Koblmüller

摘要

The growth of two-dimensional epitaxial materials on industrially relevant substrates is critical for enabling their scalable synthesis and integration into next-generation technologies. Here we present a comprehensive study of the molecular beam epitaxial growth of gallium selenide on 2-inch c-plane sapphire substrates. Using in situ reflection high-energy electron diffraction (RHEED), in situ Raman spectroscopy, optical and scanning electron microscopies, we construct a diagram of the gallium selenide growth modes as a function of substrate temperature (530–650 °C) and Se/Ga flux ratio (5–110). The growth mode diagram reveals distinct regimes, including the growth of layered post-transition metal monochalcogenide GaSe with an unstrained in-plane lattice constant of 3.71 ± 0.01 \(\dot{{{{\rm{A}}}}}\) A ° and a partial epitaxial alignment on sapphire. This work demonstrates a RHEED-based pathway for synthesizing gallium selenide of specific phase and morphology, and the construction of a phase diagram for high vapor pressure III-VI compounds that can be applied to a wide range of other metal chalcogenide materials.