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<p>Layered van der Waals crystals of topologically non-trivial and trivial semimetals with antiferromagnetic (AFM) ordering of magnetic sublattice are known to exhibit a negative magnetoresistance that is well correlated with AFM magnetization changes in a magnetic field. This effect is reported in several experimental studies with EuFe<sub>2</sub>As<sub>2</sub>, EuSn<sub>2</sub>As<sub>2</sub>, EuSn<sub>2</sub>P<sub>2</sub>, etc., where the resistance decreases quadratically with field by about 5% up to the spin-polarization field. Although this effect is well documented experimentally, its theoretical explanation is missing up to date. Here, we propose a theoretical mechanism describing the observed magnetoresistance that is inherent in AFM metals and is based on violation the binary <InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="43246_2025_970_Article_IEq1.gif" Format="GIF" Height="21" Rendition="HTML" Resolution="72" Type="Linedraw" Width="17" /> </InlineMediaObject> <EquationSource Format="TEX">\({\hat{T}}_{2}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mrow> <mover accent="true"> <mrow> <mi>T</mi> </mrow> <mrow> <mo>̂</mo> </mrow> </mover> </mrow> <mrow> <mn>2</mn> </mrow> </msub> </math></EquationSource> </InlineEquation> symmetry. It is almost isotropic to the field and current directions, contrary to the known mechanisms such as giant magnetoresistance and chiral anomaly. The proposed intrinsic mechanism of magnetoresistance is strong in a wide class of the layered AFM-ordered semimetals. The theoretically calculated magnetoresistance is qualitatively consistent with experimental data for crystals of various composition.</p>

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Universal negative magnetoresistance in antiferromagnetic metals from symmetry breaking of electron wave functions

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年11月13日

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  • Pavel D. Grigoriev,
  • Nikita S. Pavlov,
  • Igor A. Nekrasov,
  • Igor R. Shein,
  • Andrey V. Sadakov,
  • Oleg A. Sobolevskiy,
  • Evgeny Maltsev,
  • Vladimir M. Pudalov

摘要

Layered van der Waals crystals of topologically non-trivial and trivial semimetals with antiferromagnetic (AFM) ordering of magnetic sublattice are known to exhibit a negative magnetoresistance that is well correlated with AFM magnetization changes in a magnetic field. This effect is reported in several experimental studies with EuFe2As2, EuSn2As2, EuSn2P2, etc., where the resistance decreases quadratically with field by about 5% up to the spin-polarization field. Although this effect is well documented experimentally, its theoretical explanation is missing up to date. Here, we propose a theoretical mechanism describing the observed magnetoresistance that is inherent in AFM metals and is based on violation the binary \({\hat{T}}_{2}\) T ̂ 2 symmetry. It is almost isotropic to the field and current directions, contrary to the known mechanisms such as giant magnetoresistance and chiral anomaly. The proposed intrinsic mechanism of magnetoresistance is strong in a wide class of the layered AFM-ordered semimetals. The theoretically calculated magnetoresistance is qualitatively consistent with experimental data for crystals of various composition.