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<p>The nascent group IV GeSn alloys are highly attractive for spintronics applications, including quantum computing, due to their ability to enable highly scalable fabrication and all-electrical spin manipulation. In this work, we conduct an in-depth study of a two-dimensional hole gas in a Ge/GeSn quantum well, exhibiting the integer quantum Hall effect and distinct Shubnikov-de Haas oscillations. Emphasis is given to the determination of the Landé g-factor and its pronounced anisotropy in this two-dimensional system, revealing values significantly higher than those in conventional Ge or SiGe/Ge systems. Moreover, by modeling the spin-orbit interaction using the Iordanskii-Lyanda-Geller-Pikus theory, crucial cubic Rashba spin-orbit interaction coefficients, are extracted and their significance is highlighted. This work provides the experimental validation of the theoretically predicted enhancements in spin-orbit interaction and g-factors in GeSn alloys compared to Ge. Additionally, it delivers essential parameters for the design of hole spin devices, such as hole qubits, utilizing GeSn-based structures on the Si platform.</p><p></p>

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GeSn quantum wells as a platform for spin-resolved hole transport

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年10月2日

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  • Prateek Kaul,
  • Jan Karthein,
  • Jonas Buchhorn,
  • Taizo Kawano,
  • Taisei Usubuchi,
  • Jun Ishihara,
  • Nicolas Rotaru,
  • Patrick Del Vecchio,
  • Omar Concepcion,
  • Zoran Ikonic,
  • Detlev Grützmacher,
  • Qing-Tai Zhao,
  • Oussama Moutanabbir,
  • Makoto Kohda,
  • Thomas Schäpers,
  • Dan Buca

摘要

The nascent group IV GeSn alloys are highly attractive for spintronics applications, including quantum computing, due to their ability to enable highly scalable fabrication and all-electrical spin manipulation. In this work, we conduct an in-depth study of a two-dimensional hole gas in a Ge/GeSn quantum well, exhibiting the integer quantum Hall effect and distinct Shubnikov-de Haas oscillations. Emphasis is given to the determination of the Landé g-factor and its pronounced anisotropy in this two-dimensional system, revealing values significantly higher than those in conventional Ge or SiGe/Ge systems. Moreover, by modeling the spin-orbit interaction using the Iordanskii-Lyanda-Geller-Pikus theory, crucial cubic Rashba spin-orbit interaction coefficients, are extracted and their significance is highlighted. This work provides the experimental validation of the theoretically predicted enhancements in spin-orbit interaction and g-factors in GeSn alloys compared to Ge. Additionally, it delivers essential parameters for the design of hole spin devices, such as hole qubits, utilizing GeSn-based structures on the Si platform.