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<p>Among the key features for next-generation memory devices is the need for high-contrast switching between metallic and insulating states with fast switching speed and long lifetime. However, materials exhibiting such properties are rare, and their electronic structure is often poorly understood. Here, by combining state-of-the-art devices with angle-resolved photoemission spectroscopy, we study the emergence of a metastable metallic state from the insulating ground state in the charge-density wave (CDW) material 1T-TaS<sub>2</sub> after applying short current pulses. Analysis of the electronic structure suggests a picture in which 1T-TaS<sub>2</sub> transforms from a band insulator in the commensurate CDW ground state to a correlated metal in the metastable state. Moreover, the optically induced metastable state reveals a strong similarity to the current-induced one. This work provides an extensive characterization of metastable order in 1T-TaS<sub>2</sub> and proves how studying electronic properties under in-operando conditions is a critical step for next-generation devices.</p>

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Revealing the electronic structure of the current-induced metastable state in 1T-TaS2

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年11月15日

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  • Maximilian Huber,
  • Summer Zuber,
  • Valeria Rosa-Rocha,
  • Shannon C. Haley,
  • Nicholas Dale,
  • Luca Moreschini,
  • Dung-Hai Lee,
  • Aaron Bostwick,
  • Chris Jozwiak,
  • James G. Analytis,
  • Alessandra Lanzara

摘要

Among the key features for next-generation memory devices is the need for high-contrast switching between metallic and insulating states with fast switching speed and long lifetime. However, materials exhibiting such properties are rare, and their electronic structure is often poorly understood. Here, by combining state-of-the-art devices with angle-resolved photoemission spectroscopy, we study the emergence of a metastable metallic state from the insulating ground state in the charge-density wave (CDW) material 1T-TaS2 after applying short current pulses. Analysis of the electronic structure suggests a picture in which 1T-TaS2 transforms from a band insulator in the commensurate CDW ground state to a correlated metal in the metastable state. Moreover, the optically induced metastable state reveals a strong similarity to the current-induced one. This work provides an extensive characterization of metastable order in 1T-TaS2 and proves how studying electronic properties under in-operando conditions is a critical step for next-generation devices.