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<p>Magnetic nodal-line semiconductors, characterized by colossal magnetoresistance due to the lifting of spin orientation-dependent topological band degeneracy, hold great potential for advanced spintronic applications. However, a key challenge for the practical use of such topological magnets is their low magnetic transition temperature (<i>T</i><sub>C</sub>). Through first-principles calculations, we identify the self-intercalated van der Waals ferrimagnet Tc<sub>3</sub>Si<sub>2</sub>Te<sub>6</sub> as a high-<i>T</i><sub>C</sub> (~268 K) magnetic nodal-line semiconductor. Furthermore, we find that magnetic nodal-line semiconductors can exist in dually doped Tc<sub>3</sub>(Si<sub>1-<i>α</i></sub><i>Y</i><sub><i>α</i></sub>)<sub>2</sub>(Te<sub>1-<i>β</i></sub><i>Z</i><sub><i>β</i></sub>)<sub>6</sub> (<i>Y</i> = Ge and Sn; <i>Z</i> = S and Se) over a broad range of <i>α</i> and <i>β</i>. Particularly, Tc<sub>3</sub>(Si<sub>0.05</sub>Ge<sub>0.95</sub>)<sub>2</sub>(Te<sub>0.70</sub>Se<sub>0.30</sub>)<sub>6</sub> is shown to be a near room-temperature magnetic nodal-line semiconductor with a sizable band gap. Our findings suggest Tc-based self-intercalated van der Waals ferrimagnets are promising magnetic nodal-line semiconductors for practical applications in spintronic devices.</p><p></p>

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Near room-temperature magnetic nodal-line semiconductors in technetium-based self-intercalated van der Waals ferrimagnets

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年9月29日

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  • Jia-wan Li,
  • Xiao-Sheng Ni,
  • Lin Zhuang,
  • Dao-Xin Yao,
  • Ruqian Wu,
  • Yusheng Hou

摘要

Magnetic nodal-line semiconductors, characterized by colossal magnetoresistance due to the lifting of spin orientation-dependent topological band degeneracy, hold great potential for advanced spintronic applications. However, a key challenge for the practical use of such topological magnets is their low magnetic transition temperature (TC). Through first-principles calculations, we identify the self-intercalated van der Waals ferrimagnet Tc3Si2Te6 as a high-TC (~268 K) magnetic nodal-line semiconductor. Furthermore, we find that magnetic nodal-line semiconductors can exist in dually doped Tc3(Si1-αYα)2(Te1-βZβ)6 (Y = Ge and Sn; Z = S and Se) over a broad range of α and β. Particularly, Tc3(Si0.05Ge0.95)2(Te0.70Se0.30)6 is shown to be a near room-temperature magnetic nodal-line semiconductor with a sizable band gap. Our findings suggest Tc-based self-intercalated van der Waals ferrimagnets are promising magnetic nodal-line semiconductors for practical applications in spintronic devices.