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<p>Intrinsically stretchable electronics have shown potential in applications ranging from wearable health monitors to soft robotics. However, despite recent developments in material design, processing techniques and bio-integration, the fabrication of complementary circuits using scalable methods remains challenging. Here we report intrinsically stretchable organic complementary circuits that are solution processed and based on direct photo-patternable polymer semiconductors. By covalently embedding a high-performance n-type polymer semiconductor inside an elastomer matrix, we fabricate fully stretchable transistors with electron mobilities of 0.28 cm<sup>2</sup> V<sup>−1 </sup>s<sup>−1</sup> under 100% strain. Furthermore, with a covalent functionalization strategy on the p-type polymer semiconductor layer, we demonstrate successive, direct photo-patterning of n-type polymer semiconductors without electrical degradation on the existing p-type. We use this approach to fabricate intrinsically stretchable logic gates and ring oscillators with stable performance up to 100% strain at a low operating voltage of 2 V.</p>

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Intrinsically stretchable complementary circuits based on direct photo-patternable polymer semiconductors

  • 期刊论文

  • 发表日期：

    2026年4月15日

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  • Qianhe Liu,
  • Yu Zheng,
  • Haotian Wu,
  • Lukas Michalek,
  • Margherita Ronchini,
  • Rachael K. Mow,
  • Weichen Wang,
  • Hyunchang Park,
  • Xiaozhou Ji,
  • Zhiao Yu,
  • Ze-Fan Yao,
  • Yuya Nishio,
  • Chuanzhen Zhao,
  • Jian Pei,
  • Zhenan Bao

摘要

Intrinsically stretchable electronics have shown potential in applications ranging from wearable health monitors to soft robotics. However, despite recent developments in material design, processing techniques and bio-integration, the fabrication of complementary circuits using scalable methods remains challenging. Here we report intrinsically stretchable organic complementary circuits that are solution processed and based on direct photo-patternable polymer semiconductors. By covalently embedding a high-performance n-type polymer semiconductor inside an elastomer matrix, we fabricate fully stretchable transistors with electron mobilities of 0.28 cm2 V−1 s−1 under 100% strain. Furthermore, with a covalent functionalization strategy on the p-type polymer semiconductor layer, we demonstrate successive, direct photo-patterning of n-type polymer semiconductors without electrical degradation on the existing p-type. We use this approach to fabricate intrinsically stretchable logic gates and ring oscillators with stable performance up to 100% strain at a low operating voltage of 2 V.