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<p>Two-terminal p–n diodes are fundamental components in many electronic and optoelectronic systems. However, their defining characteristics limit them to single-function devices, and methods to achieve multiple functionalities—such as using devices with three or more terminals and introducing novel materials—can increase hardware and processing complexity. Here we show that a band-structure engineering approach can be used to create a p–n diode with integrated photosensing, memory and processing capabilities. The diode consists of vertically grown p-GaN/n-AlGaN/n-GaN nanowires on a silicon substrate, where the larger bandgap of the n-type AlGaN segment creates an electron reservoir in the GaN p–n junction. The embedded electron reservoir configuration enables precise control over charge trapping and release processes beyond the common p–n junction operation model, providing bias-tunable photosensing behaviour with a responsivity of 10.45 mA W<sup>−1</sup>, photosynaptic behaviour with a paired-pulse facilitation ratio up to 122% and photo-memory behaviour with eight linear states. We show that an array of such three-in-one diodes can be used to create a compact and energy-efficient image sensor with denoising and image-classification functions without additional circuits.</p>

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A single diode with integrated photosensing, memory and processing for neuromorphic image sensors

  • 期刊论文

  • 发表日期：

    2026年3月20日

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  • Yuanmin Luo,
  • Huabin Yu,
  • Danhao Wang,
  • Wei Chen,
  • Xin Liu,
  • Yang Kang,
  • Haochen Zhang,
  • Zhixiang Gao,
  • Shi Fang,
  • Muhammad Hunain Memon,
  • Dongyang Luo,
  • Milad Fathabadi,
  • Qihua Zhang,
  • Songrui Zhao,
  • Lan Fu,
  • Zongyin Yang,
  • Tawfique Hasan,
  • Sheng Liu,
  • Haiding Sun

摘要

Two-terminal p–n diodes are fundamental components in many electronic and optoelectronic systems. However, their defining characteristics limit them to single-function devices, and methods to achieve multiple functionalities—such as using devices with three or more terminals and introducing novel materials—can increase hardware and processing complexity. Here we show that a band-structure engineering approach can be used to create a p–n diode with integrated photosensing, memory and processing capabilities. The diode consists of vertically grown p-GaN/n-AlGaN/n-GaN nanowires on a silicon substrate, where the larger bandgap of the n-type AlGaN segment creates an electron reservoir in the GaN p–n junction. The embedded electron reservoir configuration enables precise control over charge trapping and release processes beyond the common p–n junction operation model, providing bias-tunable photosensing behaviour with a responsivity of 10.45 mA W−1, photosynaptic behaviour with a paired-pulse facilitation ratio up to 122% and photo-memory behaviour with eight linear states. We show that an array of such three-in-one diodes can be used to create a compact and energy-efficient image sensor with denoising and image-classification functions without additional circuits.