Scholarlink

<p>Transition metal dichalcogenides are a potential alternative to silicon and could be used to create transistors with a contacted gate pitch below 40 nm as required by the ångström-node transistor technology. However, it remains challenging to maintain an ohmic contact when the contact length is reduced to less than 20 nm. Here we show that crystalline semi-metallic antimony contacts can be epitaxially grown on molybdenum disulfide (MoS<sub>2</sub>) by molecular beam epitaxy, creating ohmic contacts with a resistance of 98 Ω µm at a contact length of 18 nm. We use the contacts to build scaled field-effect transistors with a contacted gate pitch of 40 nm with drive currents of 0.85 mA µm<sup>−1</sup>, 0.95 mA µm<sup>−1</sup> and 1.08 mA µm<sup>−1</sup> for monolayer, bilayer and trilayer MoS<sub>2</sub> channels, respectively. Statistical analysis of transistor arrays confirms that the crystalline antimony contacts are reproducible and stable.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Scaled crystalline antimony ohmic contacts for two-dimensional transistors

  • 期刊论文

  • 发表日期：

    2025年12月17日

查看全文
  • Mingyi Du,
  • Weisheng Li,
  • Guangkai Xiong,
  • Chunsong Zhao,
  • Fuchen Hou,
  • Weizhuo Gan,
  • Xiaoshu Gong,
  • Ningmu Zou,
  • Lei Liu,
  • Xilu Zou,
  • Taotao Li,
  • Wenjie Sun,
  • Dongxu Fan,
  • Zhihao Yu,
  • Xuecou Tu,
  • Yuan Gao,
  • Haoliang Shen,
  • Hao Qiu,
  • Liang Ma,
  • Jinlan Wang,
  • Yuefeng Nie,
  • Li Tao,
  • Jian-Bin Xu,
  • Junhao Lin,
  • Jeffrey Xu,
  • Yi Shi,
  • Xinran Wang

摘要

Transition metal dichalcogenides are a potential alternative to silicon and could be used to create transistors with a contacted gate pitch below 40 nm as required by the ångström-node transistor technology. However, it remains challenging to maintain an ohmic contact when the contact length is reduced to less than 20 nm. Here we show that crystalline semi-metallic antimony contacts can be epitaxially grown on molybdenum disulfide (MoS2) by molecular beam epitaxy, creating ohmic contacts with a resistance of 98 Ω µm at a contact length of 18 nm. We use the contacts to build scaled field-effect transistors with a contacted gate pitch of 40 nm with drive currents of 0.85 mA µm−1, 0.95 mA µm−1 and 1.08 mA µm−1 for monolayer, bilayer and trilayer MoS2 channels, respectively. Statistical analysis of transistor arrays confirms that the crystalline antimony contacts are reproducible and stable.