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<p>Frequency multiplier devices based on Schottky barrier diodes can be used to generate terahertz radiation, offering high power output and potential integration into all-solid-state systems. However, the scaling of the output power of such devices is often limited by the power handling capacity of a single diode. A connected chain of Schottky barrier diodes, together with a power combining approach, can be used to increase the terahertz output power. However, the uneven field distribution among the diodes—which is related to the similarity between the terahertz wavelength and the physical dimensions of the diodes themselves—leads to lower efficiency and premature breakdown. Here we report an asymmetric double-layer C-shaped diode chain structure that can adjust the local electromagnetic field distribution and enhance the conversion efficiency of the diode chain. Our resulting device has a frequency doubling efficiency of 38%, with an output exceeding 300 mW at 170 GHz.</p>

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A terahertz nonlinear diode chain based on an asymmetric double-layer topology

  • 期刊论文

  • 发表日期：

    2025年10月16日

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  • Hongji Zhou,
  • Tianchi Zhou,
  • Yaxin Zhang,
  • Hongxin Zeng,
  • Shixiong Liang,
  • Jun Zhou,
  • Huajie Liang,
  • Lin Huang,
  • Sen Gong,
  • Yazhou Dong,
  • Jingrui Liang,
  • Hailong Guo,
  • Zhihong Feng,
  • Ziqiang Yang,
  • Daniel M. Mittleman

摘要

Frequency multiplier devices based on Schottky barrier diodes can be used to generate terahertz radiation, offering high power output and potential integration into all-solid-state systems. However, the scaling of the output power of such devices is often limited by the power handling capacity of a single diode. A connected chain of Schottky barrier diodes, together with a power combining approach, can be used to increase the terahertz output power. However, the uneven field distribution among the diodes—which is related to the similarity between the terahertz wavelength and the physical dimensions of the diodes themselves—leads to lower efficiency and premature breakdown. Here we report an asymmetric double-layer C-shaped diode chain structure that can adjust the local electromagnetic field distribution and enhance the conversion efficiency of the diode chain. Our resulting device has a frequency doubling efficiency of 38%, with an output exceeding 300 mW at 170 GHz.