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<p>Various applications—including brain-like computing and on-chip artificial vision—increasingly demand a combination of electronic and photonic techniques. However, integrating both approaches on a single chip is challenging, and solutions typically rely on disparate components with power-hungry signal conversions. Here we report electro-optical Mott neurons that combine visible light emission with electrical threshold switching, as well as neuron-like oscillations. The devices are based on thin films of sputtered niobium dioxide (NbO<sub>2</sub>), a Mott insulator–metal transition material, operating at room temperature and emitting light that peaks around 810 nm. Operando measurements reveal an electronic origin to the light emission: charge carrier relaxation initiated by high-field transport in the NbO<sub>2</sub>. Our devices combine electrical and optical functions within a single material, thereby expanding the options available for future artificial intelligence hardware.</p>

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An electro-optical Mott neuron based on niobium dioxide

  • 期刊论文

  • 发表日期：

    2025年7月28日

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  • Mahnaz Islam,
  • Stephanie M. Bohaichuk,
  • Timothy D. Brown,
  • Sangheon Oh,
  • Christopher Perez,
  • Chengyang Zhang,
  • Tae Joon Park,
  • Minseong Park,
  • A. Alec Talin,
  • Shriram Ramanathan,
  • Suhas Kumar,
  • Eric Pop

摘要

Various applications—including brain-like computing and on-chip artificial vision—increasingly demand a combination of electronic and photonic techniques. However, integrating both approaches on a single chip is challenging, and solutions typically rely on disparate components with power-hungry signal conversions. Here we report electro-optical Mott neurons that combine visible light emission with electrical threshold switching, as well as neuron-like oscillations. The devices are based on thin films of sputtered niobium dioxide (NbO2), a Mott insulator–metal transition material, operating at room temperature and emitting light that peaks around 810 nm. Operando measurements reveal an electronic origin to the light emission: charge carrier relaxation initiated by high-field transport in the NbO2. Our devices combine electrical and optical functions within a single material, thereby expanding the options available for future artificial intelligence hardware.