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<p>The development of terahertz-sensing technologies has been limited by the lack of sensitive, broadband and fast terahertz detectors. Thermal bolometers are bulky and slow, whereas electronic terahertz detectors (such as Schottky diodes) are fast, but their sensitivity degrades quickly outside a narrow frequency window. Here, we show that a two-dimensional correlated topological semimetal, tantalum iridium telluride (TaIrTe<sub>4</sub>), has a large room-temperature nonlinear Hall effect and that the interaction between this effect and terahertz nonlinear electrodynamics can be used as a mechanism for terahertz sensing. Our photodetectors exhibit a high sensitivity (noise-equivalent power of around 1 pW Hz<sup>−1/2</sup>) and a large zero-bias responsivity (around 0.3 A W<sup>−1</sup>) over a broadband spectral range (0.1–10 THz) at room temperature with an intrinsic ultrafast response time (picoseconds). The zero-bias responsivity and noise-equivalent power performance can be further improved (to 18 A W<sup>−1</sup> and 0.05 pW Hz<sup>−1/2</sup>, respectively) by introducing gate-tunable electron correlations.</p>

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Terahertz sensing based on the nonlinear electrodynamics of the two-dimensional correlated topological semimetal TaIrTe4

  • 期刊论文

  • 发表日期：

    2025年6月12日

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  • Tairan Xi,
  • Haotian Jiang,
  • Jiangxu Li,
  • Yangchen He,
  • Yuchen Gu,
  • Carter Fox,
  • Louis Primeau,
  • Yulu Mao,
  • Jack Rollins,
  • Takashi Taniguchi,
  • Kenji Watanabe,
  • Daniel van der Weide,
  • Daniel Rhodes,
  • Yang Zhang,
  • Ying Wang,
  • Jun Xiao

摘要

The development of terahertz-sensing technologies has been limited by the lack of sensitive, broadband and fast terahertz detectors. Thermal bolometers are bulky and slow, whereas electronic terahertz detectors (such as Schottky diodes) are fast, but their sensitivity degrades quickly outside a narrow frequency window. Here, we show that a two-dimensional correlated topological semimetal, tantalum iridium telluride (TaIrTe4), has a large room-temperature nonlinear Hall effect and that the interaction between this effect and terahertz nonlinear electrodynamics can be used as a mechanism for terahertz sensing. Our photodetectors exhibit a high sensitivity (noise-equivalent power of around 1 pW Hz−1/2) and a large zero-bias responsivity (around 0.3 A W−1) over a broadband spectral range (0.1–10 THz) at room temperature with an intrinsic ultrafast response time (picoseconds). The zero-bias responsivity and noise-equivalent power performance can be further improved (to 18 A W−1 and 0.05 pW Hz−1/2, respectively) by introducing gate-tunable electron correlations.