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<p>Photodiodes based on two-dimensional semiconductors are of potential use in the development of optoelectronic devices, but their photovoltaic efficiency is limited by strong Fermi level pinning at metal–semiconductor contacts. Typical metal–interlayer–semiconductor contacts can address this issue, but can also lead to an increase in series resistance. Here we report a conductive-bridge interlayer contact that offers both Fermi level depinning and low resistance. We create an oxide interlayer that decouples the metal and semiconductor, while embedded gold nanoclusters in the interlayer act as conductive paths that facilitate efficient charge transport. Using these contacts, we fabricate a tungsten disulfide (WS<sub>2</sub>) photodiode with a photoresponsivity of 0.29 A W<sup>−</sup><sup>1</sup>, linear dynamic range of 122 dB and power conversion efficiency of 9.9%. Our approach also provides a platform for probing photocarrier dynamics, and we find that contact recombination substantially affects photovoltaic performance. In addition, we illustrate the potential of using photodiodes with these conductive-bridge interlayer contacts as full-colour two- and three-dimensional imagers.</p>

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Conductive-bridge interlayer contacts for two-dimensional optoelectronic devices

  • 期刊论文

  • 发表日期：

    2025年2月5日

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  • Jisu Jang,
  • Jung Pyo Hong,
  • Sang-Jun Kim,
  • Jongtae Ahn,
  • Byoung-Soo Yu,
  • Jaewon Han,
  • Kihyun Lee,
  • Aelim Ha,
  • Eunki Yoon,
  • Wonsik Kim,
  • Suyeon Jo,
  • Hyun Woo Ko,
  • Seon Kyu Yoon,
  • Takashi Taniguchi,
  • Kenji Watanabe,
  • Hogil Baek,
  • Dae-Yeon Kim,
  • Kimoon Lee,
  • Sungchul Mun,
  • Kyu Hyoung Lee,
  • Soohyung Park,
  • Kwanpyo Kim,
  • Young Jae Song,
  • Seung Ah Lee,
  • Hyunwoo J. Kim,
  • Jae Won Shim,
  • Gunuk Wang,
  • Ji-Hoon Kang,
  • Min-Chul Park,
  • Do Kyung Hwang

摘要

Photodiodes based on two-dimensional semiconductors are of potential use in the development of optoelectronic devices, but their photovoltaic efficiency is limited by strong Fermi level pinning at metal–semiconductor contacts. Typical metal–interlayer–semiconductor contacts can address this issue, but can also lead to an increase in series resistance. Here we report a conductive-bridge interlayer contact that offers both Fermi level depinning and low resistance. We create an oxide interlayer that decouples the metal and semiconductor, while embedded gold nanoclusters in the interlayer act as conductive paths that facilitate efficient charge transport. Using these contacts, we fabricate a tungsten disulfide (WS2) photodiode with a photoresponsivity of 0.29 A W−1, linear dynamic range of 122 dB and power conversion efficiency of 9.9%. Our approach also provides a platform for probing photocarrier dynamics, and we find that contact recombination substantially affects photovoltaic performance. In addition, we illustrate the potential of using photodiodes with these conductive-bridge interlayer contacts as full-colour two- and three-dimensional imagers.